Complete Teardown Analysis of Panasonic's PGA26C09600V GaN-on-Silicon HEMT with Comparison with GaN Systems' GS66504B and Transphorm's GaN HEMT

Dublin, June 27, 2017 -- Research and Markets has announced the addition of the "PanasonicPGA26C09600V GaN-on-SiliconHEMT: Complete Teardown Anlaysis" report to their offering.

Panasonic's first GaN HEMT is unveiled, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascode structure or special packaging.

Panasonic's PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.

The GaN and Al GaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.

Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.

Moreover, this report offers a comparison with GaN Systems' GS66504B and Transphorm's GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.

For more information about this report visit https://www.researchandmarkets.com/research/jzszln/panasonicpga26c096

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