Foreign Investors Pour $18.65 Billion into Japanese Stocks Amid Market Stabilization 
Chalco Stock Surges as Q1 2025 Profit Forecast Jumps Up to 58% 
Oil Prices Rebound as Hormuz Disruptions and Middle East Tensions Rattle Markets 
Federal Judge Blocks Pentagon's Blacklisting of AI Company Anthropic 
Paramount Skydance Secures $24B from Gulf Sovereign Wealth Funds for Warner Bros. Discovery Takeover 
Britain Courts Anthropic Amid US Defense Department Dispute 
UPS and Teamsters Reach Agreement to Limit Driver Severance Program 
Pershing Square Bids €30.40 Per Share to Acquire Universal Music Group in $9.4B Deal 
NASA's Artemis II Mission: First Crewed Lunar Journey Since Apollo 
Pony.ai, Uber, and Verne Launch Europe's First Commercial Robotaxi Service in Zagreb 
Samsung Electronics Posts Eightfold Profit Surge Driven by AI Chip Demand 
Japan Consumer Confidence Drops Sharply Amid Rising Fuel Costs and Middle East Tensions 
Apple Turns 50: From Garage Startup to AI Crossroads 
Kia Cuts EV Sales Target for 2030 Amid Slowing Demand and U.S. Policy Shifts 
SpaceX IPO: Retail Investors to Play Historic Role in Record-Breaking Public Offering 
Alibaba Shares Slide as Jefferies Slashes Price Target Over AI Spending and Business Losses 
SK hynix has developed the first 12-layer stacked high bandwidth memory (HBM3) chip, which vertically interconnects multiple DRAM chips to increase data processing speed.s.
The 24GB package product increased memory capacity by 50 percent from the previous product
SK hynix, which developed the first-generation HBM in 2013, said it expects the product to be in high demand in sectors such as artificial intelligence (AI) that require a high capacity and fast data processing.
It is currently validating its performance with customers and will be able to start supplying the new products in the second half of the year/
HBM3 succeeds the previous generations of HBM, HBM2, and HBM2E.
According to SK hynix, it was able to develop the 12-layer product because its engineers improved process efficiency and performance stability by applying advanced mass reflow molded underfill technology.
The company also applied through-silicon via (TSV) technology to reduce the thickness of a single DRAM chip by 40 percent and achieved the same stack height level as the 16-gigabyte product.
