Complete Teardown Analysis of Transphorm's TPH3206PS GaN-on-Silicon HEMT

Dublin, June 28, 2017 -- Research and Markets has announced the addition of the "TransphormTPH3206PSGaN-on-Silicon HEMT: Complete Teardown Analysis" report to their offering.

Transphorm's TPH3206PS transistor has a new die design and manufacturing process. The die contacts are optimized on the die area to save space, and increase current density. The transistor metal contact and field plate structure have also been changed from the previous version. These innovations halve the cost per ampere compared to the previous model.

The TPH3206PS is a 600V EZ-GaN HEMT for high frequency operation from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme, which increases switching speed.

The TPH3206PS combines a normally-on GaN-on-Silicon HEMT, which withstands high voltages, and a standard low voltage MOSFET, which drives high frequency, in a cascode configuration that ultimately yields a normally-off transistor.

Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, HEMT, MOSFET and resistor.

The report also proposes a comparison with the GaN Systems GS66504B 650V HEMT. This comparison highlights the huge differences in design and manufacturing process and their impact on device size and production cost.

For more information about this report visit https://www.researchandmarkets.com/research/t4dd7w/transphormtph3206p

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